SEPARATION OF SURFACE AND BULK MINORITY-CARRIER LIFETIMES IN SILICON

被引：5

作者：

CARROLL, KA ^{[1
]}

CASPER, KJ ^{[1
]}

机构：

[1] CLEVELAND STATE UNIV,DEPT PHYS,CLEVELAND,OH 44115

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1974年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.1686688

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：576 / 579

页数：4

共 9 条

[1] RECOMBINATION IN SEMICONDUCTORS [J].

BEMSKI, G .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06) :990-1004

[2] AN EFFICIENT FLASH X-RAY FOR MINORITY CARRIER LIFETIME MEASUREMENTS AND OTHER RESEARCH PURPOSES [J].

CURTIS, OL ;

WICKENHISER, RC .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (09) :1224-+

[3]

GOULDING FS, 1964, UCRL11227 LAWR RAD L

[4] SIMPLE CONTACTLESS METHOD FOR MEASURING DECAY TIME OF PHOTOCONDUCTIVITY IN SILICON [J].

LICHTENSTEIN, RM ;

WILLARD, HJ .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (01) :133-+

[5] APPLICATION OF MICROWAVE REFLECTION TECHNIQUE TO MEASUREMENT OF TRANSIENT AND QUIESCENT ELECTRICAL CONDUCTIVITY OF SILICON [J].

NABER, JA ;

SNOWDEN, DP .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1969, 40 (09) :1137-&

[6] LIFETIME OF INJECTED CARRIERS IN GERMANIUM [J].

NAVON, D ;

BRAY, R ;

FAN, HY .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1342-1347

[7]

NORBECK E, 1963, INSTRUMENTATION TECH, P42

[8] MEASUREMENT OF CARRIER LIFETIMES IN GERMANIUM AND SILICON [J].

STEVENSON, DT ;

KEYES, RJ .

JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) :190-195

[9] MEASUREMENT OF SHORT CARRIER LIFETIMES [J].

WERTHEIM, GK ;

AUGUSTYNIAK, WM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1956, 27 (12) :1062-1064

← 1 →