PROPERTIES OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED DIELECTRIC FILMS FROM HEXAMETHYLDISILAZANE

被引:10
作者
FREEMAN, D
KERN, W
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期
关键词
D O I
10.1116/1.576300
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:1446 / 1450
页数:5
相关论文
共 12 条
[2]   CHARACTERIZATION OF SILICON-NITRIDE AND SILICON CARBONITRIDE LAYERS FROM 1,1,3,3,5,5-HEXAMETHYLCYCLOTRISILAZANE PLASMAS [J].
BROOKS, TA ;
HESS, DW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (12) :3086-3093
[3]   NOVEL PASSIVATION DIELECTRICS - THE BORON-DOPED OR PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON CARBIDE FILMS [J].
CHANG, CY ;
FANG, YK ;
HUANG, CF ;
WU, BS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (02) :418-422
[4]   STRUCTURE OF CHEMICAL VAPOR-DEPOSITED SILICON-CARBIDE [J].
CHIN, J ;
GANTZEL, PK ;
HUDSON, RG .
THIN SOLID FILMS, 1977, 40 (JAN) :57-72
[5]  
Furumura Y., 1986, Transactions of the Institute of Electronics and Communication Engineers of Japan, Part C, VJ69C, P705
[6]   GAS EVOLUTION STUDIES FOR STRUCTURAL CHARACTERIZATION OF HEXAMETHYLDISILAZANE-BASED A-SI-C-N-H FILMS [J].
GERSTENBERG, KW ;
BEYER, W .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) :1782-1787
[7]  
GOLDSMITH N, 1967, RCA REV, V28, P153
[8]  
HABRAKEN FHP, 1985, MAT RES SOC S P, V48, P395
[9]   DEPOSITION AND COMPOSITION OF SILICON OXYNITRIDE FILMS [J].
KUIPER, AET ;
KOO, SW ;
HABRAKEN, FHPM ;
TAMMINGA, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :62-66
[10]  
LIANG WL, 1987, APPL PHYS LETT, V51, P2112