CHARACTERIZATION OF BULK NEGATIVE-RESISTANCE DIODE BEHAVIOR

被引：15

作者：

COPELAND, JA

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 09期

关键词：

D O I：

10.1109/T-ED.1967.15988

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：461 / +

页数：1

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[1] MEASUREMENTS OF CURRENT-FIELD STRENGTH CHARACTERISTIC OF N-TYPE GALLIUM ARSENIDE USING VARIOUS HIGH-POWER MICROWAVE TECHNIQUES
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[2] AN ANALYTIC APPROACH TO LSA MODE
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[4] CARROLL JE, TO BE PUBLISHED
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[6] DOPING UNIFORMITY AND GEOMETRY OF LSA OSCILLATOR DIODES
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 497 - +
[7] FISHER RE, TO BE PUBLISHED
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