EFFECTS OF IMPLANTANT DEPTH DISTRIBUTION ON PHOTOLUMINESCENCE SPECTRA IN BE-IMPLANTED GAAS

被引：6

作者：

BISHOP, SG

COMAS, J

SUNDARAM, S

MCCOMBE, BD

机构：

来源：

APPLIED PHYSICS LETTERS | 1977年 / 31卷 / 12期

关键词：

D O I：

10.1063/1.89571

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：845 / 847

页数：3

共 10 条

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[2] PHOTOLUMINESCENCE FROM BE-IMPLANTED GAAS [J].

CHATTERJEE, PK ;

VAIDYANATHAN, KV ;

MCLEVIGE, WV ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1975, 27 (10) :567-569

[3] TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE FROM BE-IMPLANTED GAAS [J].

CHATTERJEE, PK ;

MCLEVIGE, WV ;

VAIDYANATHAN, KV ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :509-512

[4]

CHATTERJEE PK, 1976, THESIS U ILLINOIS

[5] BERYLLIUM AND SULFUR ION-IMPLANTED PROFILES IN GAAS+ [J].

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PLEW, L .

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[6]

COMAS J, 1977, ION IMPLANTATION SEM

[7] RADIATIVE LIFETIMES OF DONOR-ACCEPTOR PAIRS IN P-TYPE GALLIUM ARSENIDE [J].

DINGLE, R .

PHYSICAL REVIEW, 1969, 184 (03) :788-&

[8] OPTICAL CHARACTERIZATION OF DEEP O IMPLANTS IN GAAS [J].

MONEMAR, B ;

BLUM, JM .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) :1529-1537

[9]

Pankove J.I., 1971, OPTICAL PROCESSES SE, P134

[10] PHOTOLUMINESCENCE FROM MG-IMPLANTED GAAS [J].

YU, PW ;

PARK, YS .

APPLIED PHYSICS LETTERS, 1977, 30 (01) :14-16

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