OPTICAL CHARACTERIZATION OF DEEP O IMPLANTS IN GAAS

被引：23

作者：

MONEMAR, B ^{[1
]}

BLUM, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 04期

关键词：

D O I：

10.1063/1.323873

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1529 / 1537

页数：9

共 65 条

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[2] Bell E. C., 1974, Radiation Effects, V22, P253, DOI 10.1080/10420157408230802
[3] CW OPERATION OF ION-IMPLANTED GAAS READ-TYPE IMPATT DIODES
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[4] OXYGEN-IMPLANTED DOUBLE-HETEROJUNCTION GAAS-GAALAS INJECTION LASERS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 413 - 418
[5] NEAR BAND EDGE OPTICAL ABSORPTION PRODUCED BY ION IMPLANTATION IN GAAS
BORDERS, JA
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (01) : 16 - &
[6] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS
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[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2986 - 2991
[7] ELECTRON-SPIN RESONANCE IN ARGON-ION-IMPLANTED SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4243 - 4243
[8] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON
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TITLE, RS
BRODSKY, MH
PETTIT, GD
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (05) : 205 - &
[9] ION-IMPLANTATION INDUCED OPTICAL ABSORPTION EDGE SHIFTS IN GAP
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MALMBERG, PR
LUCKE, WH
[J]. APPLIED PHYSICS LETTERS, 1970, 17 (08) : 323 - &
[10] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC
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LINDLEY, WT
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (01) : 41 - 43

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