OPTICAL CHARACTERIZATION OF DEEP O IMPLANTS IN GAAS

被引：23

作者：

MONEMAR, B ^{[1
]}

BLUM, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 04期

关键词：

D O I：

10.1063/1.323873

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1529 / 1537

页数：9

共 65 条

[21] ION-IMPLANTED MICROWAVE FIELD-EFFECT TRANSISTORS IN GAAS
HUNSPERGER, RG
HIRSCH, N
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (04) : 349 - 353
[22] OPTICAL PROPERTIES OF N-TYPE GAAS .2. FORMATION OF EFFICIENT HOLE TRAPS DURING ANNEALING IN TE-DOPED GAAS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4584 - &
[23] EFFECT OF HEAT TREATMENT ON PHOTOLUMINESCENCE OF TE DOPED GAAS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1983 - &
[24] OPTICAL PROPERTIES OF N-TYPE GAAS .3. RELATIVE BAND-EDGE RECOMBINATION EFFICIENCY OF SI- AND TE-DOPED CRYSTALS BEFORE AND AFTER HEAT TREATMENT
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4591 - &
[25] EVIDENCE FOR LUMINESCENCE INVOLVING ARSENIC VACANCY-ACCEPTOR CENTERS IN P-TYPE GAAS
HWANG, CJ
[J]. PHYSICAL REVIEW, 1969, 180 (03): : 827 - &
[26] PHOTOLUMINESCENCE STUDY OF DEFECT FORMATION DURING COPPER DIFFUSION IN ZN-DOPED GAAS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4313 - &
[27] ANNEALING BEHAVIOR OF UNIMPLANTED AND ZINC-IMPLANTED GAAS
ITOH, T
KASAHARA, J
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) : 4915 - 4919
[28] ION-IMPLANTED NITROGEN IN GALLIUM-ARSENIDE
KACHARE, AH
KAHAN, A
EULER, FK
WHATLEY, TA
SPITZER, WG
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4393 - 4399
[29] INFRARED REFLECTION OF ION-IMPLANTED GAAS
KACHARE, AH
SPITZER, WG
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 2938 - 2946
[30] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY
LANG, DV
LOGAN, RA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1053 - 1066

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