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ANNEALING BEHAVIOR OF UNIMPLANTED AND ZINC-IMPLANTED GAAS
被引:5
作者
:
ITOH, T
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO,JAPAN
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO,JAPAN
ITOH, T
[
1
]
KASAHARA, J
论文数:
0
引用数:
0
h-index:
0
机构:
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO,JAPAN
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO,JAPAN
KASAHARA, J
[
1
]
机构
:
[1]
WASEDA UNIV,SCH SCI & ENGN,SHINJUKU KU,TOKYO,JAPAN
来源
:
JOURNAL OF APPLIED PHYSICS
|
1974年
/ 45卷
/ 11期
关键词
:
D O I
:
10.1063/1.1663154
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:4915 / 4919
页数:5
相关论文
共 12 条
[1]
VACANCY ASSOCIATION OF DEFECTS IN ANNEALED GAAS
CHANG, LL
论文数:
0
引用数:
0
h-index:
0
CHANG, LL
ESAKI, L
论文数:
0
引用数:
0
h-index:
0
ESAKI, L
TSU, R
论文数:
0
引用数:
0
h-index:
0
TSU, R
[J].
APPLIED PHYSICS LETTERS,
1971,
19
(05)
: 143
-
&
[2]
OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE
GYULAI, J
论文数:
0
引用数:
0
h-index:
0
GYULAI, J
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
MITCHELL, IV
论文数:
0
引用数:
0
h-index:
0
MITCHELL, IV
RODRIGUEZ, V
论文数:
0
引用数:
0
h-index:
0
RODRIGUEZ, V
[J].
APPLIED PHYSICS LETTERS,
1970,
17
(08)
: 332
-
+
[3]
HARRIS JS, 1970, 1 INT C ION IMPL SEM
[4]
PHOTOLUMINESCENCE STUDIES IN IRRADIATED SI-DOPED GALLIUM-ARSENIDE
JEONG, M
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA, JAPAN
OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA, JAPAN
JEONG, M
SHIRAFUJI, J
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA, JAPAN
OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA, JAPAN
SHIRAFUJI, J
INUISHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA, JAPAN
OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA, JAPAN
INUISHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1973,
12
(01)
: 109
-
119
[5]
ELECTRICAL AND OPTICAL PROPERTIES OF N-TYPE SI-COMPENSATED GAAS PREPARED BY LIQUID-PHASE EPITAXY
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
KRESSEL, H
NELSON, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
NELSON, H
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(09)
: 3720
-
&
[6]
LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
KRESSEL, H
DUNSE, JU
论文数:
0
引用数:
0
h-index:
0
DUNSE, JU
NELSON, H
论文数:
0
引用数:
0
h-index:
0
NELSON, H
HAWRYLO, FZ
论文数:
0
引用数:
0
h-index:
0
HAWRYLO, FZ
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(04)
: 2006
-
&
[7]
OBSERVATIONS CONCERNING RADIATIVE EFFICIENCY AND DEEP-LEVEL LUMINESCENCE IN N-TYPE GAAS PREPARED BY LIQUID-PHASE EPITAXY
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
KRESSEL, H
HAWRYLO, FZ
论文数:
0
引用数:
0
h-index:
0
HAWRYLO, FZ
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
BUIOCCHI, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(11)
: 5139
-
&
[8]
LINDHARD J, 1963, DAN VIDENSK SELSK MA, V33
[9]
RECOMBINATION RADIATION IN GAAS BY OPTICAL AND ELECTRICAL INJECTION
NATHAN, MI
论文数:
0
引用数:
0
h-index:
0
NATHAN, MI
BURNS, G
论文数:
0
引用数:
0
h-index:
0
BURNS, G
[J].
APPLIED PHYSICS LETTERS,
1962,
1
(04)
: 89
-
90
[10]
TEMPERATURE DEPENDENCE OF ENERGY GAP IN GAAS AND GAP
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Inc., Murray Hill
PANISH, MB
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Inc., Murray Hill
CASEY, HC
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(01)
: 163
-
&
←
1
2
→
共 12 条
[1]
VACANCY ASSOCIATION OF DEFECTS IN ANNEALED GAAS
CHANG, LL
论文数:
0
引用数:
0
h-index:
0
CHANG, LL
ESAKI, L
论文数:
0
引用数:
0
h-index:
0
ESAKI, L
TSU, R
论文数:
0
引用数:
0
h-index:
0
TSU, R
[J].
APPLIED PHYSICS LETTERS,
1971,
19
(05)
: 143
-
&
[2]
OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE
GYULAI, J
论文数:
0
引用数:
0
h-index:
0
GYULAI, J
MAYER, JW
论文数:
0
引用数:
0
h-index:
0
MAYER, JW
MITCHELL, IV
论文数:
0
引用数:
0
h-index:
0
MITCHELL, IV
RODRIGUEZ, V
论文数:
0
引用数:
0
h-index:
0
RODRIGUEZ, V
[J].
APPLIED PHYSICS LETTERS,
1970,
17
(08)
: 332
-
+
[3]
HARRIS JS, 1970, 1 INT C ION IMPL SEM
[4]
PHOTOLUMINESCENCE STUDIES IN IRRADIATED SI-DOPED GALLIUM-ARSENIDE
JEONG, M
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA, JAPAN
OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA, JAPAN
JEONG, M
SHIRAFUJI, J
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA, JAPAN
OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA, JAPAN
SHIRAFUJI, J
INUISHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA, JAPAN
OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA, JAPAN
INUISHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1973,
12
(01)
: 109
-
119
[5]
ELECTRICAL AND OPTICAL PROPERTIES OF N-TYPE SI-COMPENSATED GAAS PREPARED BY LIQUID-PHASE EPITAXY
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
KRESSEL, H
NELSON, H
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
NELSON, H
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(09)
: 3720
-
&
[6]
LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
KRESSEL, H
DUNSE, JU
论文数:
0
引用数:
0
h-index:
0
DUNSE, JU
NELSON, H
论文数:
0
引用数:
0
h-index:
0
NELSON, H
HAWRYLO, FZ
论文数:
0
引用数:
0
h-index:
0
HAWRYLO, FZ
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(04)
: 2006
-
&
[7]
OBSERVATIONS CONCERNING RADIATIVE EFFICIENCY AND DEEP-LEVEL LUMINESCENCE IN N-TYPE GAAS PREPARED BY LIQUID-PHASE EPITAXY
KRESSEL, H
论文数:
0
引用数:
0
h-index:
0
KRESSEL, H
HAWRYLO, FZ
论文数:
0
引用数:
0
h-index:
0
HAWRYLO, FZ
ABRAHAMS, MS
论文数:
0
引用数:
0
h-index:
0
ABRAHAMS, MS
BUIOCCHI, CJ
论文数:
0
引用数:
0
h-index:
0
BUIOCCHI, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1968,
39
(11)
: 5139
-
&
[8]
LINDHARD J, 1963, DAN VIDENSK SELSK MA, V33
[9]
RECOMBINATION RADIATION IN GAAS BY OPTICAL AND ELECTRICAL INJECTION
NATHAN, MI
论文数:
0
引用数:
0
h-index:
0
NATHAN, MI
BURNS, G
论文数:
0
引用数:
0
h-index:
0
BURNS, G
[J].
APPLIED PHYSICS LETTERS,
1962,
1
(04)
: 89
-
90
[10]
TEMPERATURE DEPENDENCE OF ENERGY GAP IN GAAS AND GAP
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Inc., Murray Hill
PANISH, MB
CASEY, HC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Telephone Laboratories, Inc., Murray Hill
CASEY, HC
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(01)
: 163
-
&
←
1
2
→