PHOTOLUMINESCENCE FROM MG-IMPLANTED GAAS

被引：15

作者：

YU, PW

PARK, YS

机构：

[1] UNIV DAYTON,DEPT PHYS,DAYTON,OH 45469

[2] USAF,AVIONICS LAB,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 01期

关键词：

D O I：

10.1063/1.89212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：14 / 16

页数：3

共 15 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2] BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS [J].

BOGARDUS, EH ;

BEBB, HB .

PHYSICAL REVIEW, 1968, 176 (03) :993-&

[3] RADIATIVE LIFETIMES OF DONOR-ACCEPTOR PAIRS IN P-TYPE GALLIUM ARSENIDE [J].

DINGLE, R .

PHYSICAL REVIEW, 1969, 184 (03) :788-&

[4] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J].

DONNELLY, JP ;

LINDLEY, WT ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1975, 27 (01) :41-43

[5] ELECTRICAL PROPERTIES OF ZINC AND CADMIUM ION IMPLANTED LAYERS IN GALLIUM ARSENIDE [J].

HUNSPERG.RG ;

MARSH, OJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) :488-&

[6] MG AND BE ION IMPLANTED GAAS [J].

HUNSPERGER, RG ;

JAMBA, DM ;

WILSON, RG .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1318-+

[7] PHOTOLUMINESCENCE STUDY OF THERMAL CONVERSION IN GAAS GROWN FROM SILICA BOATS [J].

HWANG, CJ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5347-&

[8] IONIZATION ENERGY OF MG AND BE ACCEPTORS IN GAAS [J].

KRESSEL, H ;

HAWRYLO, FZ .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1865-&

[9] FREQUENCY SHIFT WITH TEMPERATURE AS EVIDENCE FOR DONOR-ACCEPTOR PAIR RECOMBINATION IN RELATIVELY PURE N-TYPE GAAS [J].

LEITE, RCC ;

DIGIOVANNI, AE .

PHYSICAL REVIEW, 1967, 153 (03) :841-+

[10] PHOTOLUMINESCENCE OF DONOR DOPED GAAS DIFFUSED WITH COPPER [J].

NAKASHIMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (12) :1737-+

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