SIMULTANEOUS AES AND SIMS DEPTH PROFILING OF STANDARD TA2O5 FILMS

被引：12

作者：

MATHIEU, HJ

LANDOLT, D

机构：

来源：

SURFACE AND INTERFACE ANALYSIS | 1988年 / 11卷 / 1-2期

关键词：

D O I：

10.1002/sia.740110111

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：88 / 93

页数：6

共 15 条

[1] DISTRIBUTION OF HYDROGEN IN THE NPL STANDARD TA2O5 FILMS [J].

BISHOP, HE .

SURFACE AND INTERFACE ANALYSIS, 1986, 9 (1-6) :105-109

[2] COMBINED SIMS, AES, AND XPS INVESTIGATIONS OF TANTALUM OXIDE LAYERS [J].

BISPINCK, H ;

GANSCHOW, O ;

WIEDMANN, L ;

BENNINGHOVEN, A .

APPLIED PHYSICS, 1979, 18 (02) :113-117

[3]

GRASSERBAUER M, 1986, ANGEWANDTE OBERFLACH

[4] PRACTICAL SURFACE-ANALYSIS - STATE-OF-THE-ART AND RECENT DEVELOPMENTS IN AES, XPS, ISS AND SIMS [J].

HOFMANN, S .

SURFACE AND INTERFACE ANALYSIS, 1986, 9 (1-6) :3-20

[5]

HUNT CP, 1983, SURF INTERFACE ANAL, V5, P199, DOI 10.1002/sia.740050506

[6] DEPTH PROFILING BY SIMS DEPTH RESOLUTION, DYNAMIC-RANGE AND SENSITIVITY [J].

MAGEE, CW ;

HONIG, RE .

SURFACE AND INTERFACE ANALYSIS, 1982, 4 (02) :35-41

[7] AES SPUTTER PROFILING AND ANGLE RESOLVED XPS OF INSITU GROWN VERY THIN TANTALUM-OXIDE FILMS [J].

MATHIEU, HJ ;

LANDOLT, D .

SURFACE AND INTERFACE ANALYSIS, 1984, 6 (02) :82-89

[8] ON THE INFLUENCE OF CRATER GEOMETRY ON DEPTH RESOLUTION OF AES AND XPS PROFILES OF TANTALUM OXIDE-FILMS [J].

MATHIEU, HJ ;

LANDOLT, D .

SURFACE AND INTERFACE ANALYSIS, 1983, 5 (02) :77-82

[9]

OECHSNER H, 1984, TOP CURR PHYS, V37, P63

[10] THE ULTRAHIGH RESOLUTION DEPTH PROFILING REFERENCE MATERIAL - TA2O5 ANODICALLY GROWN ON TA [J].

SEAH, MP ;

MATHIEU, HJ ;

HUNT, CP .

SURFACE SCIENCE, 1984, 139 (2-3) :549-557

← 1 2 →