THE ULTRAHIGH RESOLUTION DEPTH PROFILING REFERENCE MATERIAL - TA2O5 ANODICALLY GROWN ON TA

被引：44

作者：

SEAH, MP ^{[1
]}

MATHIEU, HJ ^{[1
]}

HUNT, CP ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE,SWISS FED INST TECHNOL,DEPT MAT,CH-1007 LAUSANNE,SWITZERLAND

来源：

SURFACE SCIENCE | 1984年 / 139卷 / 2-3期

关键词：

D O I：

10.1016/0039-6028(84)90069-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：549 / 557

页数：9

共 29 条

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[5] STUDIES OF THE EFFECT OF OXIDATION TIME AND TEMPERATURE ON THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING [J].

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[7] QUANTITATIVE-EVALUATION OF THE ION-BEAM EFFECT DURING SPUTTERING OF OXIDE LAYERS USING AES AND XPS [J].

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[8]

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[9]

Hofmann S., 1982, J TRACE MICROPROBE T, V1, P213

[10] LIMITATIONS OF ION ETCHING FOR INTERFACE ANALYSIS [J].

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