THE INFLUENCE OF THERMAL PREANNEALS ON THE HYDROGEN PASSIVATION EFFICIENCY IN LIQUID ENCAPSULATED CZOCHRALSKI-GROWN GAAS

被引：2

作者：

STIEVENARD, D ^{[1
]}

BODDAERT, X ^{[1
]}

VONBARDELEBEN, HJ ^{[1
]}

机构：

[1] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 09期

关键词：

D O I：

10.1063/1.344911

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The introduction rate of a hydrogen-related bistable electron trap, formed by a 150°C plasma annealing, depends strongly on thermal preannealing. A pure thermal 850°C preanneal completely anneals the native defects EL6 and EL3, reduces the native defect concentration EL2 by a factor of 10, and decreases equally the introduction rate of the bistable defect by a factor of 10. From a comparison between the profiles of these defects, it is possible to get informations on the microscopic structure of this hydrogen related defect as well as on the EL2 defect.

引用

页码：4385 / 4387

页数：3

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