THERMAL-STABILITY OF EL2 IN GAAS

被引：1

作者：

BODDAERT, X ^{[1
]}

LETARTRE, X ^{[1
]}

STIEVENARD, D ^{[1
]}

BOURGOIN, JC ^{[1
]}

机构：

[1] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,F-75256 PARIS,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 3卷 / 03期

关键词：

D O I：

10.1016/0921-5107(89)90017-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：249 / 251

页数：3

共 13 条

[1] NATIVE DEFECTS IN GALLIUM-ARSENIDE [J].

BOURGOIN, JC ;

VONBARDELEBEN, HJ ;

STIEVENARD, D .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) :R65-R91

[2] PROPERTIES OF VACANCY DEFECTS IN GAAS SINGLE-CRYSTALS [J].

CHIANG, SY ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2986-2991

[3] EXISTENCE OF DEEP ACCEPTORS IN GA-IMPLANTED AND B-IMPLANTED GAAS AFTER CLOSE-CONTACT ANNEALING [J].

DANSAS, P .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (06) :2212-2216

[4] ELECTRON TRAPS CREATED BY HIGH-TEMPERATURE ANNEALING IN MBE N-GAAS [J].

DAY, DS ;

OBERSTAR, JD ;

DRUMMOND, TJ ;

MORKOC, H ;

CHO, AY ;

STREETMAN, BG .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (03) :445-453

[5] EFFECT OF HEAT-TREATMENT ON NATURE OF TRAPS IN EPITAXIAL GAAS [J].

HASEGAWA, F ;

MAJERFELD, A .

ELECTRONICS LETTERS, 1976, 12 (02) :52-53

[6]

HIRAMOTO T, 1986, JPN J APPL PHYS, V25, P830

[7] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HOLMES, DE ;

CHEN, RT ;

ELLIOTT, KR ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48

[8] A STUDY OF THE 0.1-EV CONVERSION ACCEPTOR IN GAAS [J].

LOOK, DC ;

POMRENKE, GS .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3249-3254

[9]

MARTIN GM, 1986, DEEP CTR SEMICONDUCT, P399

[10] ABNORMAL OUTDIFFUSION BEHAVIOR OF THE DEEP LEVEL EL2 AT THE SURFACE-LAYER OF UNDOPED SEMIINSULATING GAAS [J].

MATSUI, M ;

KAZUNO, T .

APPLIED PHYSICS LETTERS, 1987, 51 (09) :658-660

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