INTEGRATED SEMICONDUCTOR MAGNETIC-FIELD SENSORS

[31] DEVICE MODELING [J]. PROCEEDINGS OF THE IEEE, 1983, 71 (01) : 10 - 33

[32] FLUITMAN JH, 1982, SUMMER COURSE 1982 S, V2

[33] ON THE CALCULATION OF THE RESPONSE OF (PLANAR) HALL-EFFECT DEVICES TO INHOMOGENEOUS MAGNETIC-FIELDS [J]. SENSORS AND ACTUATORS, 1981, 2 (02): : 155 - 170

[34] HALL-EFFECT DEVICE WITH BOTH VOLTAGE LEADS ON ONE SIDE OF THE CONDUCTOR [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1980, 13 (07): : 783 - 785

[35] SILICON DEPLETION LAYER MAGNETOMETER [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2750 - &

[36] REVIEW OF MAGNETOMETRY [J]. IEEE TRANSACTIONS ON MAGNETICS, 1981, 17 (06) : 3358 - 3363

[37] A SILICON MOS MAGNETIC FIELD TRANSDUCER OF HIGH SENSITIVITY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 35 - +

[38] FUJIKAWA K, 1975, Patent No. 3911468

[39] A METAL-OXIDE-SEMICONDUCTOR (MOS) HALL ELEMENT [J]. SOLID-STATE ELECTRONICS, 1966, 9 (05) : 571 - &

[40] NOVEL MAGNETIC-FIELD SENSOR USING CARRIER-DOMAIN ROTATION - PROPOSED DEVICE DESIGN [J]. ELECTRONICS LETTERS, 1976, 12 (23) : 608 - 610

[31] DEVICE MODELING [J]. PROCEEDINGS OF THE IEEE, 1983, 71 (01) : 10 - 33

[32] FLUITMAN JH, 1982, SUMMER COURSE 1982 S, V2

[33] ON THE CALCULATION OF THE RESPONSE OF (PLANAR) HALL-EFFECT DEVICES TO INHOMOGENEOUS MAGNETIC-FIELDS [J]. SENSORS AND ACTUATORS, 1981, 2 (02): : 155 - 170

[34] HALL-EFFECT DEVICE WITH BOTH VOLTAGE LEADS ON ONE SIDE OF THE CONDUCTOR [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1980, 13 (07): : 783 - 785

[35] SILICON DEPLETION LAYER MAGNETOMETER [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) : 2750 - &

[36] REVIEW OF MAGNETOMETRY [J]. IEEE TRANSACTIONS ON MAGNETICS, 1981, 17 (06) : 3358 - 3363

[37] A SILICON MOS MAGNETIC FIELD TRANSDUCER OF HIGH SENSITIVITY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) : 35 - +

[38] FUJIKAWA K, 1975, Patent No. 3911468

[39] A METAL-OXIDE-SEMICONDUCTOR (MOS) HALL ELEMENT [J]. SOLID-STATE ELECTRONICS, 1966, 9 (05) : 571 - &

[40] NOVEL MAGNETIC-FIELD SENSOR USING CARRIER-DOMAIN ROTATION - PROPOSED DEVICE DESIGN [J]. ELECTRONICS LETTERS, 1976, 12 (23) : 608 - 610