LIGHT-ACTIVATED STORAGE DEVICE (LASD)

[1] CHEN LI, 1972, SOLID STATE ELECTRON, V15, P979, DOI 10.1016/0038-1101(72)90139-6

[2] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &

[3] DETERMINATION OF INSULATOR BULK TRAPPED CHARGE-DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4073 - 4077

[4] PHOTOCURRENT SPECTROSCOPY IN THIN-FILM INSULATORS - VOLTAGE DEPENDENCE OF EXTERNAL-CIRCUIT CURRENT [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1874 - 1883

[5] CONDUCTION STUDIES IN SILICON-NITRIDE - DARK CURRENTS AND PHOTOCURRENTS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (03) : 227 - 244

[6] CAPTURE OF ELECTRONS INTO NA+-RELATED TRAPPING SITES IN SIO2 LAYER OF MOS STRUCTURES AT 77 DEGREESK [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2740 - 2743

[7] CAPTURE AND EMISSION OF ELECTRONS AT 2.4-EV-DEEP TRAP LEVEL IN SIO2-FILMS [J]. PHYSICAL REVIEW B, 1975, 11 (12): : 5023 - 5030

[8] DIMARIA DJ, 1977, FALL EL SOC M ATL

[9] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +

[10] FROHMANBENTCHKO.D, 1971, ISSCC DIG TECH PAPER, V15, P80

[1] CHEN LI, 1972, SOLID STATE ELECTRON, V15, P979, DOI 10.1016/0038-1101(72)90139-6

[2] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) : 1873 - &

[3] DETERMINATION OF INSULATOR BULK TRAPPED CHARGE-DENSITIES AND CENTROIDS FROM PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF MOS STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4073 - 4077

[4] PHOTOCURRENT SPECTROSCOPY IN THIN-FILM INSULATORS - VOLTAGE DEPENDENCE OF EXTERNAL-CIRCUIT CURRENT [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1874 - 1883

[5] CONDUCTION STUDIES IN SILICON-NITRIDE - DARK CURRENTS AND PHOTOCURRENTS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1977, 21 (03) : 227 - 244

[6] CAPTURE OF ELECTRONS INTO NA+-RELATED TRAPPING SITES IN SIO2 LAYER OF MOS STRUCTURES AT 77 DEGREESK [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2740 - 2743

[7] CAPTURE AND EMISSION OF ELECTRONS AT 2.4-EV-DEEP TRAP LEVEL IN SIO2-FILMS [J]. PHYSICAL REVIEW B, 1975, 11 (12): : 5023 - 5030

[8] DIMARIA DJ, 1977, FALL EL SOC M ATL

[9] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +

[10] FROHMANBENTCHKO.D, 1971, ISSCC DIG TECH PAPER, V15, P80