CORE-LEVEL ELECTRON-ENERGY-LOSS SPECTROSCOPY AS A LOCAL PROBE FOR THE ELECTRONIC-STRUCTURE OF THE CO/SI(111) INTERFACE

被引：23

作者：

DECRESCENZI, M

DERRIEN, J

CHAINET, E

ORUMCHIAN, K

机构：

[1] CNRS,CTR RECH MECANISMES CROISSANCE CRISTALLINE,F-13288 MARSEILLE 09,FRANCE

[2] CNRS,ETUD PROPRIETES ELECTR SOLIDES LAB,F-38042 GRENOBLE,FRANCE

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.39.5520

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5520 / 5523

页数：4

共 20 条

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[8] CO/SI(111) INTERFACE FORMATION AT ROOM-TEMPERATURE [J].

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[9] ENERGY-BAND STRUCTURE OF COSI2 EPITAXIALLY GROWN ON SI(111) [J].

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