A GENERAL ANALYTIC TECHNIQUE FOR NON-LINEAR DYNAMIC TRANSPORT PROCESSES DURING LASER ANNEALING

被引：5

作者：

KIM, DM ^{[1
]}

SHAH, RR ^{[1
]}

CROSTHWAIT, DL ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,SEMICOND RES & DEV LAB,DALLAS,TX 75222

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 06期

关键词：

D O I：

10.1063/1.328101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3121 / 3125

页数：5

共 12 条

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[2] CALCULATED TEMPERATURE DISTRIBUTION DURING LASER ANNEALING IN SILICON AND CADMIUM TELLURIDE [J].

BELL, RO ;

TOULEMONDE, M ;

SIFFERT, P .

APPLIED PHYSICS, 1979, 19 (03) :313-319

[3] THERMAL CONDUCTIVITY OF SILICON + GERMANIUM FROM 3 DEGREES K TO MELTING POINT [J].

GLASSBRENNER, CJ ;

SLACK, GA .

PHYSICAL REVIEW, 1964, 134 (4A) :1058-+

[4]

GLAZOV VM, 1969, LIQUID SEMICONDUCTOR, pCH3

[5]

GRINBERG AA, 1967, FIZ TVERD TELA+, V9, P1085

[6] PROPAGATION OF LIGHT PULSES IN A LASER AMPLIFIER [J].

ICSEVGI, A ;

LAMB, WE .

PHYSICAL REVIEW, 1969, 185 (02) :517-&

[7] TEMPERATURE RISE INDUCED BY A LASER-BEAM .2. NON-LINEAR CASE [J].

LAX, M .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :786-788

[8]

MORSE PM, 1953, METHODS THEORETICAL, V1

[9] COMPUTER-SIMULATION OF LASER ANNEALING SILICON AT 1.06 MU-M [J].

SCHULTZ, JC ;

COLLINS, RJ .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :84-87

[10] THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON [J].

WANG, JC ;

WOOD, RF ;

PRONKO, PP .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :455-458

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