DEPTH RESOLUTION IN AUGER DEPTH PROFILE ANALYSIS OF ALUMINUM METALLIZATION IN MICROELECTRONICS - THE EFFECT OF CRYSTALLINE TEXTURE

被引:48
作者
PAMLER, W [1 ]
WANGEMANN, K [1 ]
KAMPERMANN, S [1 ]
HOSLER, W [1 ]
机构
[1] SIEMENS AG,RES LABS,W-8000 MUNICH 83,GERMANY
关键词
D O I
10.1016/0168-583X(90)90536-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Due to the wide application as metallic interconnect material, aluminum alloys are important for integrated circuit technology. Analysis of aluminum thin films by Auger depth profiling, however, is impeded by severe roughening of the aluminum surface during the ion bombardment. It is shown that this is caused by the effect of ion channeling on the sputtering yield, resulting in an orientation-dependent sputter rate of the individual crystallites. Because of the strong crystalline texture of aluminium films, roughening is enhanced if the ion incidence coincides with the preferred orientations of the channeling axes. The dependence of depth resolution on ion impact angle, ion species and ion energy can be explained qualitatively by Onderdelinden's theory of single-crystalline sputtering. © 1990.
引用
收藏
页码:34 / 40
页数:7
相关论文
共 24 条
  • [1] ION-INDUCED AUGER-ELECTRON EMISSION FROM ALUMINUM
    BARAGIOLA, RA
    ALONSO, EV
    RAITI, HJL
    [J]. PHYSICAL REVIEW A, 1982, 25 (04): : 1969 - 1976
  • [2] ION-BEAM INDUCED ROUGHNESS AND ITS EFFECT IN AES DEPTH PROFILING OF MULTILAYER NI/CR THIN-FILMS
    BARNA, A
    BARNA, PB
    ZALAR, A
    [J]. SURFACE AND INTERFACE ANALYSIS, 1988, 12 (1-12) : 144 - 150
  • [3] BLAISE G, SCANNING ELECTRON MI, P129
  • [4] DEPTH RESOLUTION IMPROVEMENTS USING SPECIMEN ROTATION DURING DEPTH PROFILING
    GELLER, JD
    VEISFELD, N
    [J]. SURFACE AND INTERFACE ANALYSIS, 1989, 14 (1-2) : 95 - 98
  • [5] COMPARISON OF AUGER-SPECTRA OF MG, AL, AND SI EXCITED BY LOW-ENERGY ELECTRON AND LOW-ENERGY ARGON-ION BOMBARDMENT
    GRANT, JT
    HOOKER, MP
    SPRINGER, RW
    HAAS, TW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 481 - 484
  • [6] DEPTH-PROFILING OF CU-NI SANDWICH SAMPLES BY SECONDARY ION MASS-SPECTROMETRY
    HOFER, WO
    LIEBL, H
    [J]. APPLIED PHYSICS, 1975, 8 (04): : 359 - 360
  • [7] AUGER-ELECTRON SPECTROSCOPY DEPTH PROFILING OF NI-CR MULTILAYERS BY SPUTTERING WITH N-2+ IONS
    HOFMANN, S
    ZALAR, A
    [J]. THIN SOLID FILMS, 1979, 60 (02) : 201 - 211
  • [8] Hofmann S., 1980, Surface and Interface Analysis, V2, P148, DOI 10.1002/sia.740020406
  • [9] MOTION OF SWIFT CHARGED PARTICLES, AS INFLUENCED BY STRINGS OF ATOMS IN CRYSTALS
    LINDHARD, J
    [J]. PHYSICS LETTERS, 1964, 12 (02): : 126 - 128
  • [10] LINDHARD J, 1965, K DAN VIDENSK SELSK, V34