ION-BEAM INDUCED ROUGHNESS AND ITS EFFECT IN AES DEPTH PROFILING OF MULTILAYER NI/CR THIN-FILMS

被引：46

作者：

BARNA, A ^{[1
]}

BARNA, PB ^{[1
]}

ZALAR, A ^{[1
]}

机构：

[1] INST ELEKTR VAKUUMSKO TECH, YU-61000 LJUBLJANA, YUGOSLAVIA

来源：

SURFACE AND INTERFACE ANALYSIS | 1988年 / 12卷 / 1-12期

关键词：

D O I：

10.1002/sia.740120215

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：144 / 150

页数：7

共 13 条

[1]

BARNA A, YB 1988 RES I TECHNI, P86

[2]

BARNA A, 1984, 8TH P EUR C EL MICR, P107

[3] DIRECT TEM STUDY OF THE ROUGHENING OF SIO2 SI INTERFACE INDUCED DURING AES DEPTH PROFILING [J].

BARNA, PB ;

GOSZTOLA, L ;

ZALAR, A ;

RASIGNI, M .

SURFACE AND INTERFACE ANALYSIS, 1986, 9 (1-6) :328-328

[4] CHARACTERIZATION OF NBS STANDARD REFERENCE MATERIAL 2135 FOR SPUTTER DEPTH PROFILE ANALYSIS [J].

FINE, J ;

NAVINSEK, B .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1985, 3 (03) :1408-1412

[5] PRACTICAL SURFACE-ANALYSIS - STATE-OF-THE-ART AND RECENT DEVELOPMENTS IN AES, XPS, ISS AND SIMS [J].

HOFMANN, S .

SURFACE AND INTERFACE ANALYSIS, 1986, 9 (1-6) :3-20

[6] NICKEL CHROMIUM INTERFACE RESOLUTION IN AUGER DEPTH PROFILES [J].

MITCHELL, DF ;

SPROULE, GI .

SURFACE SCIENCE, 1986, 177 (01) :238-252

[7] ELECTRICAL-PROPERTIES AND STABILIZATION OF SPUTTERED FILMS BY INERT-GAS PRECIPITATION [J].

NAVINSEK, B ;

ZABKAR, T .

THIN SOLID FILMS, 1976, 36 (01) :41-45

[8]

Roosendaal H. E., 1981, Sputtering by particle bombardment I. Physical sputtering of single-element solids, P219

[9] THE DEPTH DEPENDENCE OF THE DEPTH RESOLUTION IN COMPOSITION DEPTH PROFILING WITH AUGER-ELECTRON SPECTROSCOPY [J].

SEAH, MP ;

HUNT, CP .

SURFACE AND INTERFACE ANALYSIS, 1983, 5 (01) :33-37

[10] IMPROVED SPUTTER-DEPTH PROFILES USING 2 ION GUNS [J].

SYKES, DE ;

HALL, DD ;

THURSTANS, RE ;

WALLS, JM .

APPLIED SURFACE SCIENCE, 1980, 5 (01) :103-106

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