THE DEPTH DEPENDENCE OF THE DEPTH RESOLUTION IN COMPOSITION DEPTH PROFILING WITH AUGER-ELECTRON SPECTROSCOPY

被引:109
作者
SEAH, MP
HUNT, CP
机构
关键词
D O I
10.1002/sia.740050108
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:33 / 37
页数:5
相关论文
共 42 条
[1]   ELECTRON-BEAM EFFECTS IN DEPTH PROFILING MEASUREMENTS WITH AUGER-ELECTRON SPECTROSCOPY [J].
AHN, J ;
PERLEBERG, CR ;
WILCOX, DL ;
COBURN, JW ;
WINTERS, HF .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) :4581-4583
[2]   DEPTH RESOLUTION OF SPUTTER PROFILING [J].
ANDERSEN, HH .
APPLIED PHYSICS, 1979, 18 (02) :131-140
[3]  
Blattner R. J., 1979, Surface and Interface Analysis, V1, P32, DOI 10.1002/sia.740010107
[4]   ANALYTICAL MODELING OF SPUTTER INDUCED SURFACE MORPHOLOGY [J].
CARTER, G ;
COLLIGON, JS ;
NOBES, MJ .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 31 (02) :65-87
[5]   THE MECHANISM OF RIPPLE GENERATION ON SANDBLASTED DUCTILE SOLIDS [J].
CARTER, G ;
NOBES, MJ ;
ARSHAK, KI .
WEAR, 1980, 65 (02) :151-174
[6]   ELEMENTAL COMPOSITION PROFILING IN THIN-FILMS BY GLOW-DISCHARGE MASS-SPECTROMETRY - DEPTH RESOLUTION [J].
COBURN, JW ;
ECKSTEIN, EW ;
KAY, E .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) :2828-2830
[7]   SPUTTER-INDUCED ROUGHNESS IN THERMAL SIO2 DURING AUGER SPUTTER PROFILING STUDIES OF THE SI-SIO2 INTERFACE [J].
COOK, CF ;
HELMS, CR ;
FOX, DC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :44-46
[8]   DEPTH RESOLUTION OF SPUTTER PROFILING INVESTIGATED BY COMBINED AUGER-X-RAY ANALYSIS OF THIN-FILMS [J].
ETZKORN, HW ;
KIRSCHNER, J .
NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3) :395-398
[9]  
ETZKORN HW, 1980, P S SPUTTERING, P542
[10]   SPUTTER DEPTH PROFILES OF NI/CR THIN-FILM STRUCTURES OBTAINED FROM THE EMISSION OF AUGER ELECTRONS AND X-RAYS [J].
FINE, J ;
NAVINSEK, B ;
DAVARYA, F ;
ANDREADIS, TD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :449-462