MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF INDIUM-PHOSPHIDE BY MICROWAVE-ABSORPTION TECHNIQUE

被引：5

作者：

HAYES, RE

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 03期

关键词：

D O I：

10.1109/T-ED.1974.17902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：233 / 235

页数：3

共 20 条

[1] MEASUREMENTS ON VELOCITY/FIELD CHARACTERISTIC OF INDIUM PHOSPHIDE [J].

BOERS, PM .

ELECTRONICS LETTERS, 1971, 7 (20) :625-+

[2] MEASUREMENTS ON DIPOLE DOMAINS IN INDIUM PHOSPHIDE [J].

BOERS, PM .

PHYSICS LETTERS A, 1971, A 34 (06) :329-+

[3] MEASUREMENT OF CARRIER-CONCENTRATION PROFILES IN EPITAXIAL INDIUM PHOSPHIDE [J].

CARDWELL, MJ ;

PEART, RF .

ELECTRONICS LETTERS, 1973, 9 (04) :88-89

[4] HIGH-EFFICIENCY MICROWAVE GENERATION IN INP [J].

COLLIVER, DJ ;

JOYCE, BD ;

GRAY, KW .

ELECTRONICS LETTERS, 1972, 8 (01) :11-&

[5]

COLLIVER DJ, PRIVATE COMMUNICATIO

[6] MICROWAVE MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF N-TYPE INP [J].

GLOVER, GH .

APPLIED PHYSICS LETTERS, 1972, 20 (06) :224-&

[7] ADDENDUM TO MICROWAVE MEASUREMENT OF VELOCITY-ELECTRIC FIELD CHARACTERISTIC OF INHOMOGENEOUS EPITAXIAL GAAS WITH CONDUCTING SUBSTRATE [J].

GLOVER, GH .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2905-&

[8] ERROR IN MICROWAVE MEASUREMENTS OF VELOCITY-FIELD CHARACTERISTIC OF N-TYPE GAAS DUE TO ENERGY RELAXATION EFFECTS [J].

GLOVER, GH .

APPLIED PHYSICS LETTERS, 1971, 18 (07) :290-+

[9]

GLOVER GH, 1971, APPL PHYS LETT, V42, P4025

[10] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE [J].

HILSUM, C ;

REES, HD .

ELECTRONICS LETTERS, 1970, 6 (09) :277-&

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