CHARACTERIZATION OF RF-SPUTTERED SNOX THIN-FILMS BY ELECTRON-MICROSCOPY, HALL-EFFECT MEASUREMENT, AND MOSSBAUER SPECTROMETRY

被引:50
作者
STJERNA, B
GRANQVIST, CG
SEIDEL, A
HAGGSTROM, L
机构
[1] UNIV GOTHENBURG, S-41296 GOTHENBURG, SWEDEN
[2] UNIV UPPSALA, DEPT PHYS, S-75121 UPPSALA, SWEDEN
关键词
D O I
10.1063/1.346889
中图分类号
O59 [应用物理学];
学科分类号
摘要
SnO(x) films, made by reactive rf magnetron sputtering onto unheated glass, were studied by electron microscopy, Hall-effect measurements, and Mossbauer spectrometry. Transmission electron microscopy showed that the films were polycrystalline with a grain size of approximately 15 nm. Hall-effect measurements gave a sharp resistivity minimum (down to 2.8 X 10(-3) OMEGA-cm) and electron concentration maximum (up to 1.2 X 10(20) cm(-3) at a specific O2/Ar gas-flow ratio during sputtering. Mossbauer spectrometry indicated that the most conducting films only consisted of the SnO2 phase, and that a SnO phase appeared at low O2/Ar ratio where it lowered the conductivity.
引用
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页码:6241 / 6245
页数:5
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