2-DIMENSIONAL SPREADING RESISTANCE PROFILING - RECENT UNDERSTANDINGS AND APPLICATIONS

被引:14
作者
VANDERVORST, W
PRIVITERA, V
RAINERI, V
CLARYSSE, T
PAWLIK, M
机构
[1] SAS,HIGH WYCOMBE HP14 3BE,BUCKS,ENGLAND
[2] IMETEM CNR,CATANIA,ITALY
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 01期
关键词
D O I
10.1116/1.587154
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Conceptually the use of spreading resistance measurements for two-dimensional profiling has been introduced two years ago. In the mean time our understanding has improved towards a better interpretation of the experimental results. A simulation program has been realized which allows to simulate the spreading resistance scans along the specially beveled surface. An ''in situ'' calibration procedure for measuring with high accuracy, the probe size and separation has been developed and a new formula, with less experimental involved parameters, for calculating the lateral spread has been derived. The technique has been applied to a study of the lateral diffusion of B as a function of annealing time. The effect of different masking material (polycrystalline silicon, thick oxide) has been studied. Other recent applications of this technique include the determination of the lateral straggling of channeling implants and the lateral diffusion of transition metals.
引用
收藏
页码:276 / 282
页数:7
相关论文
共 17 条
  • [1] 3-DIMENSIONAL CONCENTRATION PROFILES OF HYBRID DIFFUSERS IN CRYSTALLINE SILICON
    COFFA, S
    PRIVITERA, V
    FRISINA, F
    PRIOLO, F
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (01) : 195 - 200
  • [2] DIFFUSION OF ION-IMPLANTED GOLD IN P-TYPE SILICON
    COFFA, S
    CALCAGNO, L
    CAMPISANO, SU
    CALLERI, G
    FERLA, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) : 6291 - 6295
  • [3] CONTROL OF GOLD CONCENTRATION PROFILES IN SILICON BY ION-IMPLANTATION
    COFFA, S
    CALCAGNO, L
    CAMPISANO, SU
    FERLA, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) : 1350 - 1354
  • [4] 2-DIMENSIONAL PROFILING USING SECONDARY ION MASS-SPECTROMETRY
    DOWSETT, MG
    COOKE, GA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (01): : 353 - 357
  • [5] DIFFUSION AND SOLUBILITY OF ZINC IN DISLOCATION-FREE AND PLASTICALLY DEFORMED SILICON-CRYSTALS
    GRUNEBAUM, D
    CZEKALLA, T
    STOLWIJK, NA
    MEHRER, H
    YONENAGA, I
    SUMINO, K
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (01): : 65 - 74
  • [6] IN-DIFFUSION OF PT IN SI FROM THE PTSI/SI INTERFACE
    MANTOVANI, S
    NAVA, F
    NOBILI, C
    OTTAVIANI, G
    [J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5536 - 5544
  • [7] MAYER JW, 1990, ELECTRONIC MATERIAL
  • [8] 2D BORON DISTRIBUTIONS AFTER ION IMPLANT AND TRANSIENT ANNEAL
    PEARSON, PJ
    HILL, C
    [J]. JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 515 - 518
  • [9] 2-DIMENSIONAL DISTRIBUTIONS OF IONS IMPLANTED IN CHANNELING AND RANDOM DIRECTIONS OF SI SINGLE-CRYSTALS
    PRIVITERA, V
    RAINERI, V
    RIMINI, E
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) : 2370 - 2377
  • [10] A SPREADING RESISTANCE-BASED TECHNIQUE FOR 2-DIMENSIONAL CARRIER PROFILING
    PRIVITERA, V
    VANDERVORST, W
    CLARYSSE, T
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (01) : 262 - 270