CONTROL OF GOLD CONCENTRATION PROFILES IN SILICON BY ION-IMPLANTATION

Diffusion of ion-implanted gold in a silicon single crystal has been studied by the spreading resistance technique. In this work we investigate both unidimensional and bidimensional diffusion across the wafer and along the wafer surface, respectively, by using limited or unlimited gold sources. We will show that by using ion implatation of gold it is possible to produce unique concentration profiles through the fine control of the amount of gold atoms in the diffusion source; both depth and surface profiles can be tailored. All the measured profiles are in good agreement with the theoretical prediction of the kick-out mechanism for gold diffusion in silicon.