3-DIMENSIONAL CONCENTRATION PROFILES OF HYBRID DIFFUSERS IN CRYSTALLINE SILICON

被引:5
作者
COFFA, S [1 ]
PRIVITERA, V [1 ]
FRISINA, F [1 ]
PRIOLO, F [1 ]
机构
[1] DIPARTIMENTO FIS, I-95129 CATANIA, ITALY
关键词
D O I
10.1063/1.354136
中图分类号
O59 [应用物理学];
学科分类号
摘要
The diffusion of ion-implanted Au, Pt, and Zn in crystalline Si has been investigated. The implantation was performed in photolithographically defined areas of the wafer and a spreading resistance technique was used to measure the three-dimensional concentration profiles of the metal atoms after high temperature diffusion anneals. We found that the lateral spread under the mask is larger than the vertical diffusion, especially on the sample side opposite to the implanted diffusion source. All the significant features of the measured profiles can be explained as a consequence of the kick-out mechanism of diffusion for these transition metals. In fact, the peculiar shape of the concentration profiles is determined by the interplay between the influx of interstitial metal atoms and the outflux of silicon self-interstitials generated by the kick-out reaction. Despite the high lateral diffusion, it will be shown that by a suitable combination of implantation fluence and annealing temperature it is possible to limit this lateral spread inside approximately 200 mum, while maintaining a high metal concentration in the region under the implanted area. This demonstrates the possibility of using transition metal diffusion to control minority carrier lifetime in a selected area of a semiconductor device.
引用
收藏
页码:195 / 200
页数:6
相关论文
共 12 条
  • [1] COMPARISON OF GOLD, PLATINUM, AND ELECTRON-IRRADIATION FOR CONTROLLING LIFETIME IN POWER RECTIFIERS
    BALIGA, BJ
    SUN, E
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 685 - 688
  • [2] CATANIA MF, 1991, APPL PHYS A, V52, P1442
  • [3] DIFFUSION OF ION-IMPLANTED GOLD IN P-TYPE SILICON
    COFFA, S
    CALCAGNO, L
    CAMPISANO, SU
    CALLERI, G
    FERLA, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) : 6291 - 6295
  • [4] CONTROL OF GOLD CONCENTRATION PROFILES IN SILICON BY ION-IMPLANTATION
    COFFA, S
    CALCAGNO, L
    CAMPISANO, SU
    FERLA, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (03) : 1350 - 1354
  • [5] COFFA S, UNPUB
  • [6] Frank W., 1991, Diffusion and Defect Data - Solid State Data, Part A (Defect and Diffusion Forum), V75, P121
  • [7] MECHANISM AND KINETICS OF THE DIFFUSION OF GOLD IN SILICON
    GOSELE, U
    FRANK, W
    SEEGER, A
    [J]. APPLIED PHYSICS, 1980, 23 (04): : 361 - 368
  • [8] DIFFUSION AND SOLUBILITY OF ZINC IN DISLOCATION-FREE AND PLASTICALLY DEFORMED SILICON-CRYSTALS
    GRUNEBAUM, D
    CZEKALLA, T
    STOLWIJK, NA
    MEHRER, H
    YONENAGA, I
    SUMINO, K
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1991, 53 (01): : 65 - 74
  • [9] IN-DIFFUSION OF PT IN SI FROM THE PTSI/SI INTERFACE
    MANTOVANI, S
    NAVA, F
    NOBILI, C
    OTTAVIANI, G
    [J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5536 - 5544
  • [10] DIFFUSION OF GOLD IN DISLOCATION-FREE OR HIGHLY DISLOCATED SILICON MEASURED BY THE SPREADING-RESISTANCE TECHNIQUE
    STOLWIJK, NA
    HOLZL, J
    FRANK, W
    WEBER, ER
    MEHRER, H
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 39 (01): : 37 - 48