LATERAL DISTRIBUTION OF SCHOTTKY-BARRIER HEIGHT - A THEORETICAL APPROACH

被引：27

作者：

HORVATH, ZJ

机构：

[1] Research Institute for Technical Physics, the Hungarian Academy of Sciences, Budapest, H-1325

来源：

VACUUM | 1995年 / 46卷 / 8-10期

基金：

匈牙利科学研究基金会;

关键词：

D O I：

10.1016/0042-207X(95)00083-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of the metal, semiconductor and interface parameters on the Schottky barrier height is analysed in order to determine whether the lateral distribution of the barrier height obeys a normal or the lognormal law. It is found that the fluctuations of some parameters result in a normal lateral distribution, while the fluctuations of the others yield a lognormal lateral distribution of the Schottky barrier height. It is shown that the only available experimental barrier height distribution may be explained by a superposition of two lognormal distributions.

引用

收藏

页码：963 / 966

页数：4

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