ELECTRICAL CHARACTERIZATION OF INSITU FABRICATED N+-SI/GAAS INTERFACES

被引：3

作者：

ARAI, K

MIZUTANI, T

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.584774

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：497 / 501

页数：5

共 18 条

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