REALIZATION OF CAPACITIVE STRUCTURES FROM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION PROCESS

被引:3
作者
MONTEIL, C
CROS, B
BERJOAN, R
DURAND, J
机构
[1] Laboratoire de Physicochimie des Matériaux, U.R.A. 1312, 34053 Montpellier Cedex 1
[2] Institut de Science et Génie de Matériaux et Procédeś, BP5, Odeillo
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 21卷 / 01期
关键词
D O I
10.1016/0921-5107(93)90263-M
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Multilayer structures metal-insulator-metal are deposited on tungsten wires in view to realize capacitive systems. Both metal and insulator layers are formed in the same reactor by a glow discharge gas phase decomposition under a frequency of 35 kHz and a temperature of 375-degrees-C. The materials chosen are tungsten and silicon nitride. Tungsten silicide is deposited as an interphase layer for the lack of adhesion of tungsten to silicon nitride. X-ray diffraction, AES and XPS studies show that tungsten films consists of pure phase alpha with no evidence for incorporation of oxygen. Resistivity measurements on tungsten films exhibit a bulk material resistivity of 20 muOMEGA cm. The adhesion layer consists of WSi2 material with a hexagonal crystalline structure having a resistivity of 560 muOMEGA cm. Silicon nitride is a near stoichiometric material as deduced from AES spectra. Capacitance values versus insulator thickness were measured on cylindrical structures and showed a good fit between results and theory.
引用
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页码:41 / 48
页数:8
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