MECHANISTIC CONSIDERATIONS IN THE PLASMA DEPOSITION OF SILICON-NITRIDE FILMS

A stainless steel screen placed directly over the substrate in an RF glow discharge significantly altered plasma deposited (PD) silicon nitride film chemical composition and structure as measured by x-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy. Changes in film composition were more pronounced for PD silicon nitride films formed using N2 as the nitrogen source gas rather than NH3. An increase in the N:Si ratio was observed for all films deposited using the screen. This change in N:Si ratio was also reflected in an increased NH and decreased SiH bonding structure. These results are similar to those obtained previously in triode and remote plasma reactors, thereby suggesting common deposition mechanisms for films deposited in different reactor configurations. © 1990, The Electrochemical Society, Inc. All rights reserved.