REGULARITIES OF GROWTH AND ELECTRICAL-PROPERTIES IN THE PLASMA-ENHANCED DEPOSITION OF SILICON-NITRIDE

被引：2

作者：

ALEKSANDROV, LN

BELOUSOV, II

EFIMOV, VM

机构：

[1] Acad of Sciences of the USSR, Novosibirsk, USSR, Acad of Sciences of the USSR, Novosibirsk, USSR

来源：

THIN SOLID FILMS | 1988年 / 157卷 / 02期

关键词：

D O I：

10.1016/0040-6090(88)90014-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：337 / 343

页数：7

共 11 条

[1]

ALEKSANDROV LN, 1986, 7TH C GROWTH PROC SE, V1, P283

[2] MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE [J].

DUN, H ;

PAN, P ;

WHITE, FR ;

DOUSE, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1555-1563

[3]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[4]

NUMASAWA Y, 1983, JPN J APPL PHYS, V22, P792

[5] SILICON-NITRIDE FILMS GROWN ON SILICON BELOW 300-DEGREES-C IN LOW-POWER NITROGEN PLASMA [J].

PALOURA, E ;

NAUKA, K ;

LAGOWSKI, J ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :97-99

[6]

ROSLER RS, 1979, SOLID STATE TECHNOL, V22, P88

[7]

ROSLER RS, 1976, SOLID STATE TECHNOL, V19, P45

[8] ELECTRICAL-PROPERTIES OF SI-N FILMS DEPOSITED ON SILICON FROM REACTIVE PLASMA [J].

SINHA, AK ;

SMITH, TE .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2756-2760

[9] REACTIVE PLASMA DEPOSITED SI-N FILMS FOR MOS-LSI PASSIVATION [J].

SINHA, AK ;

LEVINSTEIN, HJ ;

SMITH, TE ;

QUINTANA, G ;

HASZKO, SE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :601-608

[10] CHEMICAL VAPOUR DEPOSITION PROMOTED BY RF DISCHARGE [J].

STERLING, HF ;

SWANN, RCG .

SOLID-STATE ELECTRONICS, 1965, 8 (08) :653-&

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