ADSORPTION OF PHOSPHORUS ON SI(111) - STRUCTURE AND CHEMICAL-REACTIVITY

被引：41

作者：

BOZSO, F

AVOURIS, P

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.43.1847

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the adsorption and reaction of PH3 on Si(111)-(7 x 7) between 100 and 900 K. The topology, electronic structure, and chemical reactivity of the resulting P-doped surface was studied by ultraviolet photoemission spectroscopy, low-energy electron diffraction, and ion-scattering spectroscopy. The P-doped surface has a P:Si(111)-(1 x 1) structure where P substitutes for the first Si-layer atoms of the Si(111) surface. This surface has no dangling bonds and is chemically inert.

引用

页码：1847 / 1850

页数：4

共 30 条

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