ELECTRICAL CHARACTERIZATION OF BONDING INTERFACES

被引:12
作者
ENGSTROM, O
BENGTSSON, S
ANDERSSON, GI
ANDERSSON, MO
JAUHIAINEN, A
机构
[1] Department of Solid State Electronics, Chalmers University of Technology
关键词
D O I
10.1149/1.2069135
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
An overview is given on measurement techniques and results obtained for the characterization of bonded Si-Si, Si-SiO2, and SiO2-SiO2 interfaces. The electrical properties of Si-Si interfaces are similar to those of grain boundaries, which suggests a model where the current across the interface is limited by a potential barrier determined by charge carriers captured into electron states at the bonded interface. From current-voltage and capacitance-voltage measurements, the interface charge and its energy distribution can be determined. For bonded Si-SiO2 interfaces, energy distributions. of interface states are obtained by capacitance-voltage technique with midgap densities in the region at or above 5 x 10(10) eV-1 cm-2. Interfaces between two bonded SiO2 layers exhibit charge trapping phenomena.
引用
收藏
页码:3638 / 3643
页数:6
相关论文
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