AMORPHOUS-CARBON FILMS AS PLANARIZATION LAYERS DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引:10
作者
PANG, SW [1 ]
HORN, MW [1 ]
机构
[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173
关键词
D O I
10.1109/55.62966
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A dry planarization process utilizing plasma-enhanced chemical vapor deposition (PECVD) of amorphous carbon (a-C:H) films has been developed. The degree of planarization obtained for these films is better than that of many conventional spun-on polymers. Carbon films 2.5 µm thick have been shown to planarize 1.5-µm-deep, 400-µm-wide trenches to within 0.2 µm. The deposition process can be carried out at room temperature with low ion bombardment energy (10 V) and fast deposition rate (300 nm /min). The planarization layers have been used in conjunction with both wet and dry deposited inorganic imaging layers in bilayer resist schemes to form submicrometer patterns. © 1990 IEEE
引用
收藏
页码:391 / 393
页数:3
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