THE RELATIVE CONTRIBUTIONS OF RECOMBINATION AND TUNNELING AT INTERFACE STATES TO THE AC CONDUCTANCE OF METAL-INSULATOR-SEMICONDUCTOR DIODES

被引：17

作者：

SANDS, D

BRUNSON, KM

THOMAS, CB

机构：

[1] Univ of Bradford, Bradford, Engl, Univ of Bradford, Bradford, Engl

来源：

关键词：

A. C. CONDUCTANCE - INTERFACE STATES - MIS DIODES - SEMI-INSULATING SILICON DOPED WITH OXYGEN (SIPOS) - SHOCKLEY-READ RECOMBINATION;

D O I：

10.1016/0038-1101(87)90210-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

(Edited Abstract)

引用

页码：543 / 548

页数：6

共 6 条

[1]

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