CRRES MICROELECTRONIC TEST CHIP ORBITAL DATA-II

被引：9

作者：

SOLI, GA

BLAES, BR

BUEHLER, MG

RAY, K

LIN, YS

机构：

[1] PHILLIPS LAB,AFSC,BEDFORD,MA 01731

[2] SILICON SYST INC,TUSTIN,CA 92680

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 06期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/23.211375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data from a MOSFET matrix on two JPL CRRES chips, each behind different amounts of shielding, is presented. Space damage factors are nearly identical to ground test values for pMOSFETs. The results from neighboring rows of MOSFETs show similar radiation degradation. The SRD (Space Radiation Dosimeter) is used to measure the total dose accumulated by the JPL chips. A parameter extraction algorithm that does not under estimate threshold voltage shifts is used. Temperature effects are removed from the MOSFET data.

引用

页码：1840 / 1845

页数：6

共 7 条

[1] A CMOS MATRIX FOR EXTRACTING MOSFET PARAMETERS BEFORE AND AFTER IRRADIATION [J].