A CMOS MATRIX FOR EXTRACTING MOSFET PARAMETERS BEFORE AND AFTER IRRADIATION

被引：5

作者：

BLAES, BR

BUEHLER, MG

LIN, YS

HICKS, KA

机构：

[1] California Inst of Technol, Jet, Propulsion Lab, Pasadena, CA, USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 06期

关键词：

The research described in this paper was carried out by the Jet Propulsion Laboratory; California Institute of Technology; and was sponsored by the National Aeronautics and Space Administration and the Defense Advanced Research Projects Agency. The authors are indebted to MOSIS of the Information Sciences Institute for brokering the fabrication of the TID chips. In addition we gratefully acknowledge the help of David Shaw and Steve Conrad of the JPL Radiation Effects Group in assisting in setting up the radiation test;

D O I：

10.1109/23.25492

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1529 / 1535

页数：7

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