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POST-IRRADIATION EFFECTS IN FIELD-OXIDE ISOLATION STRUCTURES
被引:79
作者
:
OLDHAM, TR
论文数:
0
引用数:
0
h-index:
0
OLDHAM, TR
LELIS, AJ
论文数:
0
引用数:
0
h-index:
0
LELIS, AJ
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
BENEDETTO, JM
论文数:
0
引用数:
0
h-index:
0
BENEDETTO, JM
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
MCGARRITY, JM
机构
:
来源
:
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
|
1987年
/ 34卷
/ 06期
关键词
:
D O I
:
10.1109/TNS.1987.4337450
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1184 / 1189
页数:6
相关论文
共 17 条
[1]
HOLE REMOVAL IN THIN-GATE MOSFETS BY TUNNELING
[J].
BENEDETTO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
BENEDETTO, JM
;
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
BOESCH, HE
;
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
MCLEAN, FB
;
MIZE, JP
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
MIZE, JP
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1985,
32
(06)
:3916
-3920
[2]
MOSFET AND MOS CAPACITOR RESPONSES TO IONIZING-RADIATION
[J].
BENEDETTO, JM
论文数:
0
引用数:
0
h-index:
0
BENEDETTO, JM
;
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1984,
31
(06)
:1461
-1466
[3]
BOESCH HE, 1982, IEEE T NUCL SCI, V29, P1446
[4]
CHARGE AND INTERFACE STATE GENERATION IN FIELD OXIDES
[J].
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
;
TAYLOR, TL
论文数:
0
引用数:
0
h-index:
0
TAYLOR, TL
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1984,
31
(06)
:1273
-1279
[5]
HOLE TRANSPORT AND TRAPPING IN FIELD OXIDES
[J].
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
;
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1985,
32
(06)
:3940
-3945
[6]
ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS
[J].
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
;
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
;
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
MCGARRITY, JM
;
WINOKUR, PS
论文数:
0
引用数:
0
h-index:
0
WINOKUR, PS
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1978,
25
(06)
:1239
-1245
[7]
CMOS HARDNESS PREDICTION FOR LOW-DOSE-RATE ENVIRONMENTS
[J].
DERBENWICK, GF
论文数:
0
引用数:
0
h-index:
0
DERBENWICK, GF
;
SANDER, HH
论文数:
0
引用数:
0
h-index:
0
SANDER, HH
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1977,
24
(06)
:2244
-2247
[8]
EFFECT OF GAMMA-RAY IRRADIATION ON SURFACE STATES OF MOS TUNNEL-JUNCTIONS
[J].
MA, TP
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV, NEW HAVEN, CT 06520 USA
YALE UNIV, NEW HAVEN, CT 06520 USA
MA, TP
;
BARKER, RC
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV, NEW HAVEN, CT 06520 USA
YALE UNIV, NEW HAVEN, CT 06520 USA
BARKER, RC
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(01)
:317
-321
[9]
CONSIDERATIONS FOR HARDENING MOS DEVICES AND CIRCUITS FOR LOW RADIATION-DOSES
[J].
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
MCGARRITY, JM
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1980,
27
(06)
:1739
-1744
[10]
SPATIAL DEPENDENCE OF TRAPPED HOLES DETERMINED FROM TUNNELING ANALYSIS AND MEASURED ANNEALING
[J].
OLDHAM, TR
论文数:
0
引用数:
0
h-index:
0
OLDHAM, TR
;
LELIS, AJ
论文数:
0
引用数:
0
h-index:
0
LELIS, AJ
;
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1986,
33
(06)
:1203
-1209
←
1
2
→
共 17 条
[1]
HOLE REMOVAL IN THIN-GATE MOSFETS BY TUNNELING
[J].
BENEDETTO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
BENEDETTO, JM
;
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
BOESCH, HE
;
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
MCLEAN, FB
;
MIZE, JP
论文数:
0
引用数:
0
h-index:
0
机构:
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
UNITED TECHNOL CORP MOSTEK,CARROLLTON,TX 75006
MIZE, JP
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1985,
32
(06)
:3916
-3920
[2]
MOSFET AND MOS CAPACITOR RESPONSES TO IONIZING-RADIATION
[J].
BENEDETTO, JM
论文数:
0
引用数:
0
h-index:
0
BENEDETTO, JM
;
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1984,
31
(06)
:1461
-1466
[3]
BOESCH HE, 1982, IEEE T NUCL SCI, V29, P1446
[4]
CHARGE AND INTERFACE STATE GENERATION IN FIELD OXIDES
[J].
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
;
TAYLOR, TL
论文数:
0
引用数:
0
h-index:
0
TAYLOR, TL
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1984,
31
(06)
:1273
-1279
[5]
HOLE TRANSPORT AND TRAPPING IN FIELD OXIDES
[J].
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
;
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1985,
32
(06)
:3940
-3945
[6]
ENHANCED FLATBAND VOLTAGE RECOVERY IN HARDENED THIN MOS CAPACITORS
[J].
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
;
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
;
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
MCGARRITY, JM
;
WINOKUR, PS
论文数:
0
引用数:
0
h-index:
0
WINOKUR, PS
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1978,
25
(06)
:1239
-1245
[7]
CMOS HARDNESS PREDICTION FOR LOW-DOSE-RATE ENVIRONMENTS
[J].
DERBENWICK, GF
论文数:
0
引用数:
0
h-index:
0
DERBENWICK, GF
;
SANDER, HH
论文数:
0
引用数:
0
h-index:
0
SANDER, HH
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1977,
24
(06)
:2244
-2247
[8]
EFFECT OF GAMMA-RAY IRRADIATION ON SURFACE STATES OF MOS TUNNEL-JUNCTIONS
[J].
MA, TP
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV, NEW HAVEN, CT 06520 USA
YALE UNIV, NEW HAVEN, CT 06520 USA
MA, TP
;
BARKER, RC
论文数:
0
引用数:
0
h-index:
0
机构:
YALE UNIV, NEW HAVEN, CT 06520 USA
YALE UNIV, NEW HAVEN, CT 06520 USA
BARKER, RC
.
JOURNAL OF APPLIED PHYSICS,
1974,
45
(01)
:317
-321
[9]
CONSIDERATIONS FOR HARDENING MOS DEVICES AND CIRCUITS FOR LOW RADIATION-DOSES
[J].
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
MCGARRITY, JM
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1980,
27
(06)
:1739
-1744
[10]
SPATIAL DEPENDENCE OF TRAPPED HOLES DETERMINED FROM TUNNELING ANALYSIS AND MEASURED ANNEALING
[J].
OLDHAM, TR
论文数:
0
引用数:
0
h-index:
0
OLDHAM, TR
;
LELIS, AJ
论文数:
0
引用数:
0
h-index:
0
LELIS, AJ
;
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1986,
33
(06)
:1203
-1209
←
1
2
→