INFLUENCE OF ION ENERGY ON THE PHYSICAL-PROPERTIES OF PLASMA DEPOSITED SIO2-FILMS

Silicon dioxide films have been deposited using a SiH4+O2 microwave plasma excited by distributed electron cyclotron resonance. The ratio of flow rates of the reactive gas was O2/SiH4 approximately 7. The substrate was not heated intentionally (T < 150-degrees-C). The effect of ion energy during deposition, in the 10-150 eV range, has been studied through refractive index, infrared absorption bands, chemical etch rate, and electrical measurements. For ion energies > 50 eV, many of the film characteristics are close to those of thermal SiO2