EFFECTS OF SUBSTRATE-TEMPERATURE ON THE ELECTRICAL AND PHYSICAL-PROPERTIES OF SILICON DIOXIDE FILMS DEPOSITED FROM ELECTRON-CYCLOTRON RESONANT MICROWAVE PLASMAS

被引:22
作者
HERAK, TV
THOMSON, DJ
机构
[1] Materials and Devices Research Laboratory, Department of Electrical Engineering, University of Manitoba, Winnipeg
关键词
D O I
10.1063/1.345155
中图分类号
O59 [应用物理学];
学科分类号
摘要
Silicon dioxide films have been fabricated at growth temperatures ranging from 25 to 330°C from an electron cyclotron resonant microwave plasma. Films were deposited from a SiH4/Ar/N2O reactant gas mixture. The minimum temperature required to fabricate high-electrical-quality silicon dioxide films is between 255 and 290°C. In metal-oxide-semiconductor devices, electron injection field strengths and breakdown field strengths were as high as 5 and 8 MV/cm, respectively, for oxides grown above this temperature range. Films grown at temperatures slightly below the 255-290°C range have much poorer electrical integrity. A concomitant increase in the refractive index was observed with the improvement in the electrical integrity of these films. The refractive index increased with increasing growth temperature and was in the range of 1.44-1.47. In the 255-290°C temperature range, the refractive index of the silicon dioxide films reached approximately 1.46-1.47, and saturates thereafter. Infrared spectroscopy indicated a hydrogen content in these films of approximately 4 at. %. The hydrogen was bonded as SiOH, while no SiH impurity groups were detected. The dependence of the deposition rate on the substrate temperature was dependent on the location of the substrate. For films grown on substrates in contact with the plasma, the deposition rate was found to decrease with increasing substrate temperature. In contrast, for films grown on substrates located in the plasma afterglow, the deposition rate increased with increasing substrate temperature.
引用
收藏
页码:6347 / 6352
页数:6
相关论文
共 29 条
[1]   LOW-TEMPERATURE DEPOSITION OF HIGH-QUALITY SILICON DIOXIDE BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].
BATEY, J ;
TIERNEY, E .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3136-3145
[2]   ELECTRICAL CHARACTERISTICS OF VERY THIN SIO2 DEPOSITED AT LOW SUBSTRATE TEMPERATURES [J].
BATEY, J ;
TIERNEY, E ;
NGUYEN, TN .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) :148-150
[3]   THIN-FILM TRANSISTORS INCORPORATING A THIN, HIGH-QUALITY PECVD SIO2 GATE DIELECTRIC [J].
BUCHANAN, DA ;
BATEY, J ;
TIERNEY, E .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) :576-578
[4]  
CHAU TT, 1988, 2ND P INT C PROP APP, P193
[5]  
CHAU TT, IN PRESS IEEE T INSU
[6]   CHARGE TRAPPING STUDIES IN SIO2 USING HIGH-CURRENT INJECTION FROM SI-RICH SIO2-FILMS [J].
DIMARIA, DJ ;
GHEZ, R ;
DONG, DW .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4830-4841
[7]   PRODUCTION OF SILICON-OXIDES FROM GLOW-DISCHARGE DECOMPOSITION OF SILANE AND NITRIC-OXIDE [J].
EAGLE, DJ ;
MILNE, WI .
ELECTRONICS LETTERS, 1986, 22 (23) :1243-1244
[8]   PRODUCTION OF SILICON-OXIDES FROM THE GLOW-DISCHARGE DECOMPOSITION OF SILANE AND NO-2 [J].
EAGLE, DJ ;
MILNE, WI .
THIN SOLID FILMS, 1987, 147 (03) :259-266
[9]   LOW INTERFACE STATE DENSITY SIO2 DEPOSITED AT 300-DEGREES-C BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION ON RECONSTRUCTED SI SURFACES [J].
FOUNTAIN, GG ;
RUDDER, RA ;
HATTANGADY, SV ;
MARKUNAS, RJ ;
LINDORME, PS .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4744-4746
[10]   LOW-TEMPERATURE DEPOSITION OF SILICON DIOXIDE FILMS FROM ELECTRON-CYCLOTRON RESONANT MICROWAVE PLASMAS [J].
HERAK, TV ;
CHAU, TT ;
THOMSON, DJ ;
MEJIA, SR ;
BUCHANAN, DA ;
KAO, KC .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) :2457-2463