THIN-FILM TRANSISTORS INCORPORATING A THIN, HIGH-QUALITY PECVD SIO2 GATE DIELECTRIC

被引：11

作者：

BUCHANAN, DA

BATEY, J

TIERNEY, E

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 11期

关键词：

D O I：

10.1109/55.9281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：576 / 578

页数：3

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