INTERFACIAL PROBLEMS IN PREPARING A-SI-H-FETS

[1] ABOVE THRESHOLD CHARACTERISTICS OF AMORPHOUS-SILICON ALLOY THIN-FILM TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1202 - 1203

[2] INTERACTION BETWEEN N-TYPE AMORPHOUS HYDROGENATED SILICON FILMS AND METAL-ELECTRODES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3909 - 3911

[3] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J]. ELECTRONICS LETTERS, 1979, 15 (06) : 179 - 181

[4] THE CHARACTERISTICS AND PROPERTIES OF OPTIMIZED AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (02): : 87 - 92

[5] POWELL MJ, 1984, MATERIALS RES SOC S, V33, P259

[6] CONTACT RESISTANCE MEASUREMENTS FOR HYDROGENATED AMORPHOUS-SILICON SOLAR-CELL STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) : 1682 - 1687

[7] SEMITRANSPARENT SILICIDE ELECTRODES UTILIZING INTERACTION BETWEEN HYDROGENATED AMORPHOUS-SILICON AND METALS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (07) : 682 - 683

[8] THE ELECTRICAL CHARACTERIZATION OF SURFACES, INTERFACES AND CONTACTS TO A-SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (01): : 1 - 17

[9] LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY [J]. PHYSICAL REVIEW B, 1985, 32 (01): : 23 - 47

[10] IMPLICATIONS OF THE CHANGE IN WORK FUNCTION OF CHROMIUM BY THE PRESENCE OF HYDROGEN ON THE PROPERTIES OF ELECTRICAL CONTACT BETWEEN CHROMIUM AND HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 557 - 558

[1] ABOVE THRESHOLD CHARACTERISTICS OF AMORPHOUS-SILICON ALLOY THIN-FILM TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1202 - 1203

[2] INTERACTION BETWEEN N-TYPE AMORPHOUS HYDROGENATED SILICON FILMS AND METAL-ELECTRODES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) : 3909 - 3911

[3] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J]. ELECTRONICS LETTERS, 1979, 15 (06) : 179 - 181

[4] THE CHARACTERISTICS AND PROPERTIES OF OPTIMIZED AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (02): : 87 - 92

[5] POWELL MJ, 1984, MATERIALS RES SOC S, V33, P259

[6] CONTACT RESISTANCE MEASUREMENTS FOR HYDROGENATED AMORPHOUS-SILICON SOLAR-CELL STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) : 1682 - 1687

[7] SEMITRANSPARENT SILICIDE ELECTRODES UTILIZING INTERACTION BETWEEN HYDROGENATED AMORPHOUS-SILICON AND METALS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (07) : 682 - 683

[8] THE ELECTRICAL CHARACTERIZATION OF SURFACES, INTERFACES AND CONTACTS TO A-SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (01): : 1 - 17

[9] LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY [J]. PHYSICAL REVIEW B, 1985, 32 (01): : 23 - 47

[10] IMPLICATIONS OF THE CHANGE IN WORK FUNCTION OF CHROMIUM BY THE PRESENCE OF HYDROGEN ON THE PROPERTIES OF ELECTRICAL CONTACT BETWEEN CHROMIUM AND HYDROGENATED AMORPHOUS-SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 557 - 558