ABOVE THRESHOLD CHARACTERISTICS OF AMORPHOUS-SILICON ALLOY THIN-FILM TRANSISTORS

被引：16

作者：

HYUN, C

SHUR, MS

HACK, M

YANIV, Z

CANNELLA, V

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 11期

关键词：

D O I：

10.1063/1.95097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1202 / 1203

页数：2

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[1] THEORETICAL-ANALYSIS OF AMORPHOUS-SILICON FIELD-EFFECT-TRANSISTORS
KISHIDA, S
NARUKE, Y
UCHIDA, Y
MATSUMURA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (03): : 511 - 517
[2] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION
LECOMBER, PG
SPEAR, WE
GHAITH, A
[J]. ELECTRONICS LETTERS, 1979, 15 (06) : 179 - 181
[3] HIGH-PERFORMANCE AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS
MATSUMURA, M
NARA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6443 - 6444
[4] OVSHINSKY SR, 1983, P SPIE C VIRGINIA, V407
[5] PHYSICS OF AMORPHOUS-SILICON BASED ALLOY FIELD-EFFECT TRANSISTORS
SHUR, M
HACK, M
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3831 - 3842
[6] FLAT-BAND VOLTAGE AND SURFACE-STATES IN AMORPHOUS SILICON-BASED ALLOY FIELD-EFFECT TRANSISTORS
SHUR, MS
HACK, M
HYUN, C
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 382 - 386
[7] THIN-FILM TRANSISTORS ON A-SI-H
THOMPSON, MJ
JOHNSON, NM
MOYER, MD
LUJAN, R
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1643 - 1646
[8] YANIV Z, 1984, FEB P MAT RES SOC AL