METAL CVD FOR MICROELECTRONIC APPLICATIONS - AN EXAMINATION OF SURFACE-CHEMISTRY AND KINETICS

被引:75
作者
CREIGHTON, JR
PARMETER, JE
机构
[1] Organization 1126, Sandia National Laboratories, Albuquerque, NM, 87815
关键词
CHEMICAL VAPOR DEPOSITION; SURFACE CHEMISTRY; KINETICS; MICROELECTRONICS; METALLIZATION;
D O I
10.1080/10408439308242560
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We review the surface chemistry and kinetics relevant to the chemical vapor deposition (CVD) of metals used for microelectronic applications. Our efforts focus on the surface chemistry of aluminum, tungsten, and copper CVD, which have received the most recent interest for metallization. We first briefly review a variety of topics concerning the applications and the chemistry and kinetics of metal CVD. We also give a brief overview of the application of surface science techniques to the study of CVD-related surface chemistry.
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页码:175 / 238
页数:64
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