IMPACT IONIZATION COEFFICIENTS FOR ELECTRONS AND HOLES IN STRAINED IN0.2GA0.8AS AND IN0.15GA0.63AL0.22AS CHANNELS EMBEDDED IN AL0.3GA0.7AS

被引：5

作者：

CHEN, YC

BHATTACHARYA, PK

机构：

[1] Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 01期

关键词：

D O I：

10.1063/1.353874

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured impact ionization coefficients, alpha and beta, in 150 angstrom pseudomorphically strained materials for the first time. The measurements were made on specially designed lateral p-i-n diodes. Alpha and beta in lattice-matched GaAs layers are found to be lower than those in strained In0.2Ga0.8As and higher than those in strained In0.15Ga0.63Al0.22As. Beta is larger than alpha in all the samples. The results are discussed in terms of the changes in the band structure due to biaxial strain.

引用

页码：465 / 467

页数：3

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