PICOSECOND GAAS MONOLITHIC OPTOELECTRONIC SAMPLING CIRCUIT

被引：9

作者：

KAMEGAWA, M

GIBONEY, K

KARIN, J

ALLEN, S

CASE, M

YU, R

RODWELL, MJW

BOWERS, JE

机构：

[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA

[2] Shimadzu Corporation, Kyoto

[3] Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 06期

关键词：

D O I：

10.1109/68.91037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated an optoelectronic sampling circuit for direct measurement of picosecond optical waveforms. The monolithic device incorporates a GaAs Schottky photodetector and a high-speed sampling circuit gated by a nonlinear transmission line strobe pulse generator. Excited by a 850 nm model-locked dye laser, a 5.6 ps FWHM impulse response is measured; we estimate a deconvolved impulse response of approximately 4.5 ps FWHM.

引用

页码：567 / 569

页数：3

共 9 条

[1] HOLE VELOCITY IN P-GAAS [J].