BOUND MULTIEXCITON LUMINESCENCE IN LITHIUM-DOPED SILICON

[1] TEMPERATURE-DEPENDENCE OF THE EXCITON LIFETIME IN HIGH-PURITY SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 68 - 71

[2] TRANSIENT DECAY OF SATELLITE LINES OF BOUND EXCITONS IN SI-P [J]. PHYSICAL REVIEW B, 1979, 20 (06): : 2431 - 2437

[3] NEW MODEL FOR BOUND MULTI-EXCITON COMPLEXES [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (08) : 713 - 715

[4] SHELL-MODEL OF BOUND MULTIEXCITON COMPLEXES IN SILICON [J]. CANADIAN JOURNAL OF PHYSICS, 1977, 55 (20) : 1787 - 1801

[5] RECOMBINATION OF DONOR BOUND-EXCITONS IN GERMANIUM [J]. PHYSICAL REVIEW B, 1979, 20 (08): : 3285 - 3291

[6] NEW PHOTOLUMINESCENCE LINE-SERIES SPECTRA ATTRIBUTED TO DECAY OF MULTIEXCITON COMPLEXES BOUND TO LI, B, AND P CENTERS IN SI [J]. PHYSICAL REVIEW B, 1974, 9 (02): : 723 - 726

[7] Lyon S. A., 1978, Solid State Communications, V28, P317, DOI 10.1016/0038-1098(78)90432-5

[8] ANALYSIS OF THE EXCITON LUMINESCENCE OF SILICON FOR CHARACTERIZATION OF THE CONTENT OF IMPURITIES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : 501 - 511

[9] BOUND MULTIEXCITON LUMINESCENCE IN BORON-DOPED SILICON - EXCITATION-LEVEL DEPENDENCE AND RECOMBINATION KINETICS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 46 (02) : 553 - 560

[10] BOUND-EXCITON LUMINESCENCE FROM HIGHLY DOPED SILICON [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (05) : 1807 - 1808

[1] TEMPERATURE-DEPENDENCE OF THE EXCITON LIFETIME IN HIGH-PURITY SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 68 - 71

[2] TRANSIENT DECAY OF SATELLITE LINES OF BOUND EXCITONS IN SI-P [J]. PHYSICAL REVIEW B, 1979, 20 (06): : 2431 - 2437

[3] NEW MODEL FOR BOUND MULTI-EXCITON COMPLEXES [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (08) : 713 - 715

[4] SHELL-MODEL OF BOUND MULTIEXCITON COMPLEXES IN SILICON [J]. CANADIAN JOURNAL OF PHYSICS, 1977, 55 (20) : 1787 - 1801

[5] RECOMBINATION OF DONOR BOUND-EXCITONS IN GERMANIUM [J]. PHYSICAL REVIEW B, 1979, 20 (08): : 3285 - 3291

[6] NEW PHOTOLUMINESCENCE LINE-SERIES SPECTRA ATTRIBUTED TO DECAY OF MULTIEXCITON COMPLEXES BOUND TO LI, B, AND P CENTERS IN SI [J]. PHYSICAL REVIEW B, 1974, 9 (02): : 723 - 726

[7] Lyon S. A., 1978, Solid State Communications, V28, P317, DOI 10.1016/0038-1098(78)90432-5

[8] ANALYSIS OF THE EXCITON LUMINESCENCE OF SILICON FOR CHARACTERIZATION OF THE CONTENT OF IMPURITIES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : 501 - 511

[9] BOUND MULTIEXCITON LUMINESCENCE IN BORON-DOPED SILICON - EXCITATION-LEVEL DEPENDENCE AND RECOMBINATION KINETICS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 46 (02) : 553 - 560

[10] BOUND-EXCITON LUMINESCENCE FROM HIGHLY DOPED SILICON [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (05) : 1807 - 1808