EFFECTS OF TOTAL-DOSE IRRADIATION ON GATE-ALL-AROUND (GAA) DEVICES

被引：38

作者：

COLINGE, JP

TERAO, A

机构：

[1] Universite Catholique de Louvain, MaxwellDICE, Place du Levant 3

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 02期

关键词：

D O I：

10.1109/23.212320

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The response of Gate-All-Around MOS transistors to dose irradiation is quite different from that observed on other types of Silicon-On-Insulator MOSFETs. Indeed, in regular SOI MOSFETs, edge leakage increases substantially faster than the main transistor leakage upon creation of oxide charges due to the irradiation. The GAA MOSFET behaves in the opposite way: the shift of edge threshold voltage upon creation of charges in the oxide is smaller than that of the main transistor. As a result, a kink develops in the subthreshold characteristics of regular SOI MOSFETs upon irradiation, while the original subthreshold kink of GAA devices disappears when the device is irradiated.

引用

页码：78 / 82

页数：5

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