DX-CENTER-LIKE TRAPS AND PERSISTENT PHOTOCONDUCTIVITY IN TE-DOPED ALXGA1-XSB ON GASB

被引：33

作者：

ZHU, Y

TAKEDA, Y

SASAKI, A

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.341740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1897 / 1901

页数：5

共 22 条

[1] MODULATION-SPECTROSCOPY STUDY OF THE GA1-XALXSB BAND-STRUCTURE [J].

ALIBERT, C ;

JOULLIE, A ;

JOULLIE, AM ;

ANCE, C .

PHYSICAL REVIEW B, 1983, 27 (08) :4946-4954

[2] ELIMINATION OF PERSISTENT PHOTOCONDUCTIVITY AND IMPROVEMENT IN SI ACTIVATION COEFFICIENT BY AL SPATIAL SEPARATION FROM GA AND SI IN AL-GA-AS-SI SOLID SYSTEM - A NOVEL SHORT-PERIOD ALAS/N-GAAS SUPER-LATTICE [J].

BABA, T ;

MIZUTANI, T ;

OGAWA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L627-L629

[3] ON THE CARRIER EMISSION FROM DONOR-RELATED CENTERS IN GAAS1-XPX AND ALXGA1-XAS [J].

CALLEJA, E ;

GOMEZ, AI ;

MUNOZ, E .

SOLID-STATE ELECTRONICS, 1986, 29 (01) :83-88

[4] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

CHAND, N ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

FISCHER, R ;

CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492

[5] INVESTIGATIONS OF MN-DOPED ZNSE BY PHOTOCAPACITANCE AND PHOTOCURRENT TECHNIQUES [J].

GRIMMEISS, HG ;

OVREN, C ;

ALLEN, JW .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (03) :1103-1111

[6] WAVE-FUNCTIONS AND OPTICAL CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS [J].

JAROS, M .

PHYSICAL REVIEW B, 1977, 16 (08) :3694-3706

[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[8] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[9] PRESSURE AND COMPOSITIONAL DEPENDENCES OF THE HALL-COEFFICIENT IN ALXGA1-XAS AND THEIR SIGNIFICANCE [J].

LIFSHITZ, N ;

JAYARAMAN, A ;

LOGAN, RA ;

CARD, HC .

PHYSICAL REVIEW B, 1980, 21 (02) :670-678

[10] CHARACTERIZATION OF THE DX CENTER IN THE INDIRECT ALXGA1-XAS ALLOY [J].

MIZUTA, M ;

MORI, K .

PHYSICAL REVIEW B, 1988, 37 (02) :1043-1046

← 1 2 3 →