共 12 条
- [1] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE[J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (01): : 1 - 16ANDERSON, DASPEAR, WE
- [2] GRUNTHANER FJ, 1978, PHYSICS SIO2 ITS INT, P389
- [3] THICKNESS DEPENDENCES OF PROPERTIES OF P-DOPED AND B-DOPED HYDROGENATED AMORPHOUS-SILICON .1. DARK CONDUCTIVITY AND PHOTOCONDUCTIVITY[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (05): : 511 - 519HASEGAWA, SSHIMIZU, SKURATA, Y
- [4] ELECTRON-SPIN-RESONANCE AND ELECTRICAL-PROPERTIES OF P-DOPED MICROCRYSTALLINE SI[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (05): : 431 - 447HASEGAWA, SNARIKAWA, SKURATA, Y
- [5] AMORPHOUS SIN-H DIELECTRICS WITH LOW-DENSITY OF DEFECTS[J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1272 - 1274HASEGAWA, SMATUURA, MKURATA, Y
- [6] FORMATION AND BONDING STRUCTURE OF SILICON-NITRIDE BY 20-KEV N+ ION-IMPLANTATION[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (07) : 2539 - 2543HASEGAWA, SZALM, PC
- [7] PROPERTIES OF AMORPHOUS SEMICONDUCTING A-SI-H/A-SINX-H MULTILAYER FILMS AND OF A-SINX-H ALLOYS[J]. PHYSICAL REVIEW B, 1984, 30 (10): : 5791 - 5799IBARAKI, NFRITZSCHE, H
- [8] ELECTRONIC-STRUCTURE OF HYDROGENATED AND UNHYDROGENATED AMORPHOUS SINX (0-LESS-THAN-X-LESS-THAN-1.6) - A PHOTOEMISSION-STUDY[J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1896 - 1910KARCHER, RLEY, LJOHNSON, RL
- [9] CHEMICAL BONDING STATES IN THE AMORPHOUS SIXC1-X-H SYSTEM STUDIED BY X-RAY PHOTOEMISSION SPECTROSCOPY AND INFRARED-ABSORPTION SPECTRA[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (02): : 283 - 294KATAYAMA, YUSAMI, KSHIMADA, T
- [10] NUCHO RN, 1978, PHYSICS SIO2 ITS INT, P60