SELECTIVE EPITAXIAL-GROWTH OF SILICON BY USING SILICON-NITRIDE FILM AS A MASK

被引：17

作者：

OGAWA, H

NISHINAGA, T

ARIZUMI, T

KASUGA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 12期

关键词：

D O I：

10.1143/JJAP.10.1675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1675 / +

页数：1

共 16 条

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[2]

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[3] A NEW METHOD FOR EPITAXIAL GROWTH OF SILICON AND ITS THERMODYNAMICAL ANALYSIS [J].

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OGAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (01) :32-+

[4] THERMODYNAMICAL ANALYSES AND EXPERIMENTS FOR PREPARATION OF SILICON NITRIDE [J].

ARIZUMI, T ;

NISHINAGA, T ;

OGAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (09) :1021-+

[5]

BLANK JM, 1966, T METALL SOC AIME, V236, P291

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[7]

FILBY JD, 1966, USE THIN FILMS PHYSI

[8]

HIRTH JP, 1963, PROGRESS MATERIALS S, V11

[9]

HONIG RE, 1962, RCA REV, V23, P567

[10] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .V. NUCLEATION KINETIC MEASUREMENTS ON (100) SURFACES [J].

JOYCE, BA ;

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