HIGH-TEMPERATURE OPERATION OF INGAASP INP HETEROSTRUCTURE LASERS AND INTEGRATED BACK FACET MONITORS FABRICATED BY CHEMICALLY ASSISTED ION-BEAM ETCHING

被引：22

作者：

DZIOBA, S

JATAR, S

HERAK, TV

COOK, JPD

MARKS, J

JONES, T

SHEPHERD, FR

机构：

[1] Bell-Northern Research Ltd., Station C., Ottawa, Ont. K1Y 4H7

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 20期

关键词：

D O I：

10.1063/1.109327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chemically assisted ion beam etching (CAIBE) has been used to etch InGaAsP/InP ridge laser facets. Smooth, vertical facets 4 mum deep have been etched using Ar/Cl2 CAIBE with a beam voltage of 440 V and a beam current density of 0.08 mA/cm2. Room temperature and high temperature (85-degrees-C) L-I characteristics and device performance have been evaluated, as well as the performance of integrated back facet monitors. Output powers of 9.5 mW from the laser and a monitor current of 3.75 mA have been obtained.

引用

页码：2486 / 2488

页数：3

共 13 条

[1] LOW THRESHOLD GAAS/GAALAS BH LASERS WITH ION-BEAM-ETCHED MIRRORS
BOUADMA, N
RIOU, J
KAMPFER, A
[J]. ELECTRONICS LETTERS, 1985, 21 (13) : 566 - 568
[2] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET
COLDREN, LA
IGA, K
MILLER, BI
RENTSCHLER, JA
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 681 - 683
[3] CONTINUOUS OPERATION OF MONOLITHIC DYNAMIC-SINGLE-MODE COUPLED-CAVITY LASERS
COLDREN, LA
EBELING, KJ
RENTSCHLER, JA
BURRUS, CA
WILT, DP
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 368 - 370
[4] COOK JPD, IN PRESS CAN J PHYS
[5] DZIOBA S, 1984, 5TH S PLASM P EL SOC
[6] GALNASP-LNP LASER WITH MONOLITHICALLY INTEGRATED MONITORING DETECTOR
IGA, K
MILLER, BI
[J]. ELECTRONICS LETTERS, 1980, 16 (09) : 342 - 343
[7] MONOLITHIC INTEGRATION OF A LASER DIODE, PHOTO MONITOR, AND ELECTRIC-CIRCUITS ON A SEMI-INSULATING GAAS SUBSTRATE
MATSUEDA, H
NAKAMURA, M
[J]. APPLIED OPTICS, 1984, 23 (06): : 779 - 780
[8] CW OPERATION OF 1.5-MU-M GAINASP-INP BURIED-HETEROSTRUCTURE LASER WITH A REACTIVE-ION-ETCHED FACET
MIKAMI, O
AKIYA, H
SAITOH, T
NAKAGOME, H
[J]. ELECTRONICS LETTERS, 1983, 19 (06) : 213 - 215
[9] DRY-ETCHING TECHNIQUES AND CHEMISTRIES FOR III-V-SEMICONDUCTORS
PEARTON, SJ
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 10 (03): : 187 - 196
[10] HIGH-PERFORMANCE INGAASP/INP 1-3MUM LASER STRUCTURES WITH BOTH FACETS ETCHED
SAITO, H
NOGUCHI, Y
NAGAI, H
[J]. ELECTRONICS LETTERS, 1986, 22 (22) : 1157 - 1158

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